ECG015
¼ Watt, High Linearity InGaP HBT Amplifier
Typical RF Performance at 25
°
C
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
∗
(+9 dBm / tone, 1 MHz spacing)
The Communications Edge
TM
Product Information
1960 MHz Application Circuit (ECG015B-PCB1960)
DIODE1
ID=D1
+8 V
RES
ID=R1
R=30 Ohm
CAP
ID=C3
C=.1uF
1960 MHz
16.5 dB
9 dB
9.5 dB
+24 dBm
+41 dBm
+17 dBm
5 dB
+5 V
100 mA
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a D C regulator.
R ES
ID=R3
R =220 Ohm
RES
ID=R2
R=390 Ohm
CAP
ID=C2
C=1000 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C6
C=56 pF
IND
ID=L2
L=15 nH
IND
ID=L1
L=15 nH
SUBCKT
NET="ECG015"
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
CAP
ID=C4
C=56 pF
RES
ID=R4
R=22 Ohm
Noise Figure
Device Voltage
Quiescent Current
∗
Please see note 2 on page 1.
IND
ID=L3
L=3.3 nH
CAP
ID=C7
C=1.2 pF
CAP
ID=C8
C=1.2 pF
CAP
ID=C5
C=56 pF
C7 placed at silkscreen marker ‘A” or center of component
placed at 3.9 deg. @ 1900 MHz away from pin 1.
C8 is placed at silkscreen
marker ‘7” or center of
component placed at 32 deg.
@ 1.9 GHz away from pin 3.
Ssg, OIP3 & P1dB vs.
Temperature @ 1.96GHz
26
24
22
20
18
16
14
12
10
-40
-15
Gain
P1dB
OIP3
44
43
42
41
40
39
38
37
36
10
35
60
85
ACPR1 vs. Pout
vs. Temperature at 1.96GHz
-40
-45
Gain P1dB
OIP3 (dBm)
-50
dBc
-55
-60
-65
85°
C
-70
11
13
15
17
-40°
C
25°
C
Temperature (°
C)
Pout (dBm)
2140 MHz Application Circuit (ECG015B-PCB2140)
Typical RF Performance at 25
°
C
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
∗
(+9 dBm / tone, 1 MHz spacing)
2140 MHz
15 dB
20 dB
10 dB
+24 dBm
+41 dBm
5 dB
+5 V
100 mA
DIODE1
ID=D1
+8 V
RES
ID=R1
R=30 Ohm
CAP
ID=C3
C=.1uF
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a D C regulator.
R ES
ID=R3
R =220 Ohm
RES
ID=R2
R=390 Ohm
CAP
ID=C2
C=1000 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C6
C=56 pF
IND
ID=L2
L=15 nH
IND
ID=L1
L=15 nH
SUBCKT
NET="ECG015"
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
Noise Figure
Device Voltage
Quiescent Current
∗
Please see note 2 on page 1.
CAP
ID=C4
C=56 pF
RES
ID=R4
R=22 Ohm
IND
ID=L3
L=3.3 nH
CAP
ID=C7
C=.7 pF
CAP
ID=C8
C=1 pF
CAP
ID=C5
C=56 pF
C7 placed at silkscreen marker ‘A” or center of
component placed at 4.4 deg. @ 2.14 GHz away
from pin 1.
C8 is placed at silkscreen marker ‘7” or
center of component placed at 37 deg. @
2.14 GHz away from pin 3.
Ssg, OIP3, & P1dB vs.
Temperature @ 2.14GHz
24
22
42
41
40
39
38
37
Ssg
12
-40
-15
10
35
60
85
P1dB
OIP3
36
Ssg & P1dB
20
18
16
14
Temperature (°
C)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 5
October 2006
OIP3 (dBm)
WJCI [ WJ COMMUNICATION. INC. ]
