ECG006
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, R
bias
= 24.3
Ω
, I
cc
= 45 mA
MHz
dB
dB
dB
dBm
dBm
dB
100
15.3
-20
-29
+15.8
+31
3.8
500
15.2
-18
-16
+15.4
+31.5
3.7
900
15.1
-14
-13
+15.2
+32
3.6
1900
14.5
-17
-14
+15.0
+30
3.6
2140
14.3
-18
-14
+14.9
+30
3.6
2400
14.1
-20
-15
+14.6
+29.6
3.6
3500
13.9
-17
-15
+14
5800
10.2
-12.5
-9.5
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24.3
Ω,
Icc = 45 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
18
16
S11, S22 (dB)
Gain
14
12
10
+25C
8
500
1000
-40C
+85C
-25
1500
2000
Frequency (MHz)
2500
3000
0
1
0
-5
-10
-15
-20
S11, S22 vs. Frequency
90
80
70
60
50
40
30
20
10
+25C
Vde vs. Icc
S22
S11
Icc (mA)
5
6
2
3
4
Frequency (GHz)
0
3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40
Vde (V)
OIP3 vs. Frequency
35
30
OIP3 (dBm)
NF (dB)
25
20
+25°C
15
500
1000
-40°C
+85°C
2500
3000
2
500
4
3.5
3
2.5
Noise Figure vs. Frequency
18
16
P1dB (dBm)
14
12
10
P1dB vs. Frequency
+25°C
1000
1500
2000
8
500
1000
-40°C
+85°C
2500
3000
1500
2000
Frequency (MHz)
Frequency (MHz)
1500
2000
Frequency (MHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 7 April 2007
WJCI [ WJ COMMUNICATION. INC. ]
