EC1019C
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 15
Ω
, I
cc
= 70 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
21.0
-32.0
-23
+19.4
+33
3.3
500
20.5
-26.9
-24.4
+19.4
+33.2
2.9
900
19.7
-25.5
-17.2
+19.4
+33.6
2.9
1900
17.2
-19.9
-11.3
+19.5
+31
3.0
2140
16.7
-15.4
-12.2
+19.0
+31
3.0
2400
16.2
-12.7
-13.8
+18.8
+30.7
3.1
3500
13.8
-12.0
-12.2
+16.2
5800
10.7
-9.9
-11.3
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 4.7 V, Rbias = 16.5
Ω,
Icc = 70 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
S 1v . F q e c
2 s re u n y
S11, S22 vs. Frequency
Icc vs. Vde
160
120
2
5
S11,S22 (dB)
2
0
S21 (dB)
1
5
1
0
5
0
0
1
2
3
F q e c (G z)
re u n y H
OIP3 vs. Frequency
40
35
0
-5
-15
-20
S11
Icc (mA)
-10
S22
80
40
25°C
0
4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0
+ 5°C
2
4
5
6
-25
-30
0
1
2
3
4
5
6
Frequency (GHz)
Noise Figure vs. Frequency
Vde (V)
P1dB vs. Frequency
24
5
4
3
2
1
25°C
1000
1500
85°C
2000
-40°C
2500
3000
OIP3 (dBm)
30
25
20
500
NF
P1dB (dBm)
NF (dB)
20
16
25°C
85°C
-40°C
2500
3000
0
0
500
1000
1500
2000
2500
Frequency (MHz)
12
500
1000
Frequency (MHz)
1500
2000
Frequency (MHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 4 April 2007
WJCI [ WJ COMMUNICATION. INC. ]
