EC1019B
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 15
Ω
, I
cc
= 70 mA
100
21.2
-23.7
-19.0
+19.4
+33
2.9
500
20.9
-21.5
-17.3
+19.4
+33.2
2.5
900
20.4
-19.2
-15.1
+19.4
+33.6
2.6
1900
18.5
-16.6
-10.6
+19.5
+31
2.8
2140
18.2
-16.9
-10.2
+19.0
+31
2.9
2400
17.6
-18.2
-10.2
+18.8
+30.7
3500
15.6
-11.2
-8.1
+16.2
5800
11.3
-9.5
-6.2
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 4.7 V, Rbias = 16.5
Ω,
Icc = 70 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
S21 vs. Frequency
S11, S22 vs. Frequency
Icc vs. Vde
160
120
25
0
S11,S22 (dB)
-5
20
S21 (dB)
15
10
5
+25 °C
Icc (mA)
-10
-15
-20
-25
S22
80
40
25°C
0
4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0
S11
0
0
1
2
Frequency (GHz)
OIP3 vs. Frequency
40
35
3
4
0
1
2
Frequency (GHz)
3
4
Vde (V)
P1dB vs. Frequency
24
Noise Figure vs. Frequency
5
4
OIP3 (dBm)
3
2
1
30
25
20
500
25°C
1000
1500
85°C
2000
-40°C
2500
3000
NF
P1dB (dBm)
NF (dB)
20
16
25°C
85°C
-40°C
2500
3000
0
0
500
1000
1500
2000
2500
Frequency (MHz)
12
500
1000
Frequency (MHz)
1500
2000
Frequency (MHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 4 April 2007
WJCI [ WJ COMMUNICATION. INC. ]
