AP622
UMTS-band 4W HBT Amplifier Module
Performance Graphs
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA
+28V
GND
+28V
10µF
DNP
+5V
0
10µF
0
DNP
100pF
.01µF
DNP
.01µF
DNP
100pF
RF IN
0
DNP
DNP
6
5
4
3
2
1
DNP
0
RF OUT
DNP
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Gain vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C
30
29
-40
2110 MHz
2140 MHz
2170 MHz
28
27
2110 MHz
ACLR1 (dBc)
24
25
26
27
-45
Gain (dB)
-50
26
25
22
-55
2140 MHz
2170 MHz
-60
22
23
24
25
26
27
23
Output Power (dBm)
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C
Average Output Power (dBm)
Icc vs. Output Power
WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C
15
Collector Efficiency (%)
2110 MHz
170
160
12
9
6
3
0
22
2140 MHz
Icc (mA)
2170 MHz
150
140
130
120
23
24
25
26
27
22
23
24
25
26
27
Average Output Power (dBm)
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 4 March 2007
WJCI [ WJ COMMUNICATION. INC. ]
