欢迎访问ic37.com |
会员登录 免费注册
发布采购

AP602-PCB2140 参数 Datasheet PDF下载

AP602-PCB2140图片预览
型号: AP602-PCB2140
PDF下载: 下载PDF文件 查看货源
内容描述: 高动态范围4W ​​28V HBT放大器 [High Dynamic Range 4W 28V HBT Amplifier]
分类和应用: 放大器
文件页数/大小: 11 页 / 841 K
品牌: WJCI [ WJ COMMUNICATION. INC. ]
 浏览型号AP602-PCB2140的Datasheet PDF文件第2页浏览型号AP602-PCB2140的Datasheet PDF文件第3页浏览型号AP602-PCB2140的Datasheet PDF文件第4页浏览型号AP602-PCB2140的Datasheet PDF文件第5页浏览型号AP602-PCB2140的Datasheet PDF文件第6页浏览型号AP602-PCB2140的Datasheet PDF文件第7页浏览型号AP602-PCB2140的Datasheet PDF文件第8页浏览型号AP602-PCB2140的Datasheet PDF文件第9页  
AP602
Product Features
800 – 2400 MHz
+35.7 dBm P1dB
-52 dBc ACLR @ �½W P
AVG
-47 dBc IMD3 @ �½W PEP
16% Efficiency @ �½W P
AVG
Internal Active Bias
High Dynamic Range 4W 28V HBT Amplifier
Product Description
The AP602 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2400 MHz applications with up to +35.7 dBm of
compressed 1dB power.
Functional Diagram
ACLR1 (dBc)
The AP602 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
The device
Internal Temp Compensation
incorporates proprietary bias circuitry to compensate for
Capable of handling 7:1 VSWR @
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
28 Vcc, 2.14 GHz, 3W CW Pout
internal active bias allows the AP602 to operate directly off
a commonly used high voltage supply (typically +24 to
Lead-free/RoHS-compliant
+32V). An added feature allows the quiescent bias to be
5x6 mm power DFN package
adjusted externally to meet specific system requirements.
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 80 mA, 2140 MHz, 25
˚C
-40
-45
-50
-55
-60
-65
19
26 V
28 V
30 V
32 V
Applications
Mobile Infrastructure HPA
WiBro HPA
The AP602 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
21
23
25
27
29
Average Output Power (dBm)
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
800
Typ
2140
+27
13
9
9
-52
-47
2
112
15.7
+35.7
80
+5
+28
Max
2200
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
dBm
mA
V
V
940
+27
15.5
11
6.4
-50
-62
103
17
+35.7
Typical
1960
+27
14.2
12
9
-50
-51
103
17
+35.5
80
+5
+28
2140
+27
13
9
9
-52
-47
112
15.7
+35.7
Absolute Maximum Rating
Parameter
Storage Temperature, T
stg
Junction Temperature, T
J
For 10 hours MTTF
6
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 80 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP602 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 3W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 3W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 3W CW Pout.
Rating
-55 to +125 ºC
192 ºC
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
160 mA
4.7 W
Ordering Information
Part No.
AP602-F
AP602-PCB900
AP602-PCB1960
AP602-PCB2140
RF Input Power (CW tone), P
in
Breakdown Voltage C-B, BV
CBO
Breakdown Voltage C-E, BV
CEO
Quiescent Bias Current, I
CQ
Power Dissipation, P
DISS
Description
High Dynamic Range 28V 4W HBT Amplifier
869-960 MHz Evaluation board
1930-1990 MHz Evaluation board
2110-2170 MHz Evaluation board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 11 May 2007 ver 1