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AP602-F 参数 Datasheet PDF下载

AP602-F图片预览
型号: AP602-F
PDF下载: 下载PDF文件 查看货源
内容描述: 高动态范围4W ​​28V HBT放大器 [High Dynamic Range 4W 28V HBT Amplifier]
分类和应用: 放大器
文件页数/大小: 11 页 / 841 K
品牌: WJCI [ WJ COMMUNICATION. INC. ]
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AP602
Frequency
Total Output Power
Power Gain
Input Return Loss
Output Return Loss
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
High Dynamic Range 4W 28V HBT Amplifier
2010-2025 MHz Application Circuit
Typical Performance at 25
°C
at an
output power of +27 dBm
2015 MHz
+27 dBm
13.7 dB
12 dB
8.5 dB
-44 dBc
110 mA
16.5 %
+36 dBm
80 mA
+5 V
+28 V
GND
V
BIAS
V
PD
V
CC
C7
W = .030”
L = .980”
C7
1000pF
100pF
1000pF
L3
4.7 nH
See note 3
C27
10pF
C2
2.7pF
See note 4
C30
2.4pF
See note 5
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.095” (8.3° @ 2015 MHz) from the center of C2.
4. The center of C2 is placed at 0.135” (11.8° @ 2015 MHz) from the edge of the AP602 (U1).
5. The center of C30 is placed at 0.530” (50.9° @ 2015 MHz) from the edge of the AP602 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼
λ.
7. The main RF trace is cut at component location L3 for this particular reference design.
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25
˚C
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
15
14
0
50
Collector Efficiency (%)
-40 ˚C
-5
40
30
20
10
0
25 ˚C
85 ˚C
S11, S22 (dB)
Gain (dB)
13
12
-40 ˚C
-10
-15
-20
-25
1.96
11
10
28
25 ˚C
85 ˚C
S11
S22
1.98
2
2.02
2.04
2.06
2.08
30
32
34
36
38
20
24
28
32
36
Output Power (dBm)
Frequency (GHz)
Output Power (dBm)
ACLR vs. Output Power vs. Icq
Collector Efficiency (%)
Efficiency vs. Output Power
3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz
IMD vs. Output Power
CW 2-tone signal, 2015 MHz,
∆f
= 1 MHz, 28V, 80 mA Icq, 25
˚C
-40
-44
ACLR (dBc)
3-carrier TDSCDMA, Vcc = 28V, 2015MHz
10
8
-40
-50
Icq = 80mA
Icq=100mA
3C-TDSCDMA, PAR = 9.6 dB
@0.01% prob, BW = 1.28MHz,
Sample clk = 32 MHz
IQ Mod Filter = 2.1 MHz
IMD3L
IMD3U
IMD5
6
4
2
0
IMD (dBc)
-48
-52
-56
16
-60
-70
-80
18
20
22
24
Average Output Power (dBm)
26
16
18
20
22
24
26
22
24
26
28
30
32
Average Output Power (dBm)
Output Power, PEP (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 6 of 11 May 2007 ver 1