AH212
Frequency (MHz)
Gain (dB)
Input Return Loss (dB)
Output Return Loss (dB)
Output P1dB (dBm)
Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge
TM
Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications
Typical RF Performance at 25
C
2010
25.5
17
10.5
+30
+48
+23.5
6
+5 V
400 mA
2025
25.2
19
10
+30
+47.5
+23.5
6
RES
ID=R1
R=10 Ohm
RES
ID=R3
R=75 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=47 pF
CAP
ID=C2
C=47 pF
CAP
ID=C5
C=1000 pF
CAP
ID=C6
C=1000 pF
Vcc = +5 V
CAP
ID=C11
C=4.7E6 pF
SIZE 1210
CAP
ID=C10
C=1000 pF
CAP
ID=C9
C=47 pF
RES
ID=R2
R=0 Ohm
IND
ID=L1
L=18 nH
IND
ID=L2
L=18 nH
Size 0805
8
5
1
2
NET="AH212"
3
4
7
6
6
7
5
8
CAP
ID=C8
C=47 pF
Channel Power (dBm)
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure (dB)
Device / Supply Voltage
Quiescent Current
S21 vs. Frequency
TLINP
ID=TL1
Z0=50 Ohm
L=125 mil
Eeff=4.6
Loss=0
F0=0 MHz
PORT
P=2
Z=50 Ohm
CAP
ID=C7
C=2.7 pF
All passive components are of size 0603
unless otherwise noted.
VBC = +5 V
CAP
ID=C4
C=1000 pF
C7 is placed between silkscreen marker "2" and "3" on WJ's eval
Board or @ 17 degrees at 2.01GHz away from pins 6 and 7.
S11 vs. Frequency
S22 vs. Frequency
28
27
S21 (dB)
S11 (dB)
0
+25°C
-40°C
+85°C
0
-5
S22 (dB)
-5
-10
-15
-20
+25°C
-40°C
+85°C
26
25
24
23
2000
-10
-15
-20
+25°C
-40°C
+85°C
2005
2010
2015
2020
2025
-25
2000
2005
2010
2015
2020
2025
-25
2000
2005
2010
2015
2020
2025
Frequency (MHz)
OIP3 vs. Frequency
55
50
45
40
35
2010
+25°
C, +15 dBm/tone
Frequency (MHz)
ACPR vs. Channel Power
Frequency (MHz)
IS-95, 9 Ch. Fwd,
±885 kHz offset, 30 kHz Meas BW, 2010 MHz
-35
OIP3 (dBm)
ACPR (dBc)
-45
-55
-65
-75
2015
2020
Frequency (MHz)
2025
19
20
21
22
23
24
Output Channel Power (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Page 5 of 12 August 2006
WJCI [ WJ COMMUNICATION. INC. ]
