AH1
High Dynamic Range Amplifier
Application Circuit: 800 – 2500 MHz (AH1-PCB)
Vcc = +5 V
Typical RF Performance at 25
qC
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
(+5 dBm / tone, 10 MHz spacing)
ID=C5
C=56 pF
All passive components are of size 0603 unless otherwise noted.
Component C1 is shown in the silkscreen but is not used for this
configuration.
ID=C2
C=56 pF
Z0=22 Ohm
EL=15.2 Deg
F0=0.9 GHz
ID=Q1
NET="AH1"
ID=C4
L=12 nH
MHz 900 1900 2140
dB
14.2 12.2 12.0
dB
-21
-14
-21
dB
-14
-13
-11
dBm +21.7 +22 +22
dBm
+42
+41
+40
ID=C6
C=56 pF
ID=C3
L=5.6 nH
IS-95 Channel Power
(@-45 dBc ACPR, 9 channels fwd)
dBm +15.5 +16.5
dB
3.2
3.3
3.3
+5V @ 150mA
Noise Figure
Device Bias
Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other
layers added for rigidity), 1 oz copper, 50
:
Microstrip line details: width = .025”.
Gain
Return Loss
15
14
13
12
11
10
750
1000
1250
1500
1750
2000
2250
Frequency (MHz)
0
-5
Gain (dB)
Gain and Output IP3 vs. Temperature
Frequency = 800, 801 MHz @ Pout =5dBm
15
14
13
12
11
Gain
OIP3
10
45
-10
-15
-20
-25
-30
750
1000
1250
1500
S11
S22
43
42
41
40
-40
-15
10
35
60
85
Temperature (
o
C)
1750
2000
2250
Frequency (MHz)
ACPR vs. Channel Power
ACPR vs. Channel Power
-40
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz
-40
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
P1dB and Noise Figure vs. Temperature
23
P1dB (dBm)
Frequency = 800 MHz
4
3
2
P1dB
NF
-50
-50
22
21
20
19
-60
-60
1
0
-70
10
11
12
13
14
15
16
17
-70
10
11
12
13
14
15
16
17
Output Channel Power (dBm)
-40
-15
10
35
Output Channel Power (dBm)
Temperature ( C)
o
60
85
Specifications and information are subject to change without notice.
WJ Communications, Inc
x
Phone 1-800-WJ1-4401
x
FAX: 408-577-6621
x
e-mail: sales@wj.com
x
Web site: www.wj.com
Page 3 of 5 April 2007
Noise Figure (dB)
Output IP3 (dBm)
44
WJCI [ WJ COMMUNICATION. INC. ]
