�½ Watt, High Linearity InGaP HBT Amplifier
AH116
The Communications Edge
TM
Product Information
Product Features
x
800 – 1000 MHz
x
+28 dBm P1dB
x
+43 dBm Output IP3
x
17.5 dB Gain @ 900 MHz
x
+5V Single Positive Supply
x
MTTF > 100 Years
x
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Product Description
The AH116 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance for various narrow-
band tuned application circuits with up to +43 dBm OIP3
and +28 dBm of compressed 1-dB power and is housed
in a lead-free/green/RoHS-compliant SOIC-8 package. All
devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH116 to maintain high linearity over temperature and
operate directly off a +5 V supply. This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
1
8
7
6
5
2
3
4
Applications
x
Final stage amplifiers for Repeaters
x
Mobile Infrastructure
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameters
Frequency Range
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR
Typical Performance
(1)
Min
15
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
Typ
900
17.5
18
7
+28.7
+43
+23
7
250
+5
Max
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Typical
900
17.5
-18
-7
+28.7
+43
+23
7
+5 V @ 250 mA
+27
+42
Noise Figure
Operating Current Range
(3)
Device Voltage
200
300
Noise Figure
Supply Bias
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Parameter
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
-40 to +85
qC
-65 to +150
qC
+22 dBm
+8 V
400 mA
2W
+250
qC
Rating
Ordering Information
Part No.
AH116-S8G
AH116-S8PCB900
Description
900 MHz Evaluation Board
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
�½ Watt, High Linearity InGaP HBT Amplifier
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 4
April 2006
WJCI [ WJ COMMUNICATION. INC. ]
