AH116 / ECP052G
Product Features
•
800 – 1000 MHz
•
+28 dBm P1dB
•
+43 dBm Output IP3
•
17.5 dB Gain @ 900 MHz
•
Single Positive Supply (+5 V)
•
MTTF >100 Years
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Description
The AH116 / ECP052 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+43 dBm OIP3 and +28 dBm of compressed 1-dB power
and is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for
Functional Diagram
1
8
7
6
5
2
3
4
•
Lead-free/green/RoHS-compliant
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
SOIC-8 SMT Pkg.
Applications
•
Mobile Infrastructure
•
Final Stage Amplifier for
Repeaters
AH116 / ECP052 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
Function
Vref
Input / Base
Output / Collector
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside
2, 4, 5
Specifications
Parameters
Frequency Range
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 900 MHz
Typical Performance
(1)
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
200
Min
15
Typ
900
17.5
18
7
+28.7
+43
+23
7
250
+5
Max
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Typical
900
17.5
-18
-7
+28.7
+43
+23
7
+5 V @ 250 mA
+27
+42
Noise Figure
Operating Current Range
(3)
Device Voltage
300
Noise Figure
Supply Bias
Test conditions unless otherwise noted.
1. T = 25ºC, Vsupply = +5 V, Frequency = 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85
°C
-65 to +150
°C
+22 dBm
+8 V
400 mA
2W
+250
°C
Ordering Information
Part No.
AH116-S8*
ECP052G*
AH116-S8G
AH116-S8PCB900
Description
�½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
�½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
�½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 6 June 2005
WJCI [ WJ COMMUNICATION. INC. ]
