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WTPB16A60SW 参数 Datasheet PDF下载

WTPB16A60SW图片预览
型号: WTPB16A60SW
PDF下载: 下载PDF文件 查看货源
内容描述: 敏感的门双向晶闸管 [Sensitive Gate Bi-Directional Triode Thyristor]
分类和应用:
文件页数/大小: 5 页 / 380 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WTPB16A60SW
8
Electrical Characteristics
(T
J
= 25°C
unless otherwise
specified)
Symbol
I
DRM/
/I
RRM
V
TM
(V
DRM
=V
RRM,
)
Forward “On” Voltage
(Note2)
Characteristics
Peak Forward or Reverse Blocking Current
T
J
=25℃
T
J
=125℃
(I
TM
= 22.5A tp=380μs)
T2+G+
T2+G-
T2-G-
T2+G+
Gate Trigger Voltage (Continuous dc)
(V
D
=12 Vdc, R
L
= 33 Ω)
Min
-
-
-
-
-
-
-
-
-
0.2
40
-
T2+G+
T2+G-
T2-G-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
5
1
1.55
10
10
10
1.2
1.2
1.2
-
-
15
25
30
25
25
Unit
μA
mA
V
Gate Trigger Current (Continuous dc)
I
GT
(V
D
= 12 Vdc, R
L
= 33 Ω)
mA
V
GT
T2+G-
T2-G-
V
V
GD
dV/dt
I
H
Gate threshold voltage( V
D
= V
DRM,
RL = 3.3 KΩ,T
J
=125℃,)
Critical rate of rise of commutation Voltage (V
D
=0.67V
DRM
)
Holding Current (I
T
= 100 mA)
Latching current
V
V/μs
mA
I
L
(V
D
=12 Vdc,I
GT
=0.1A)
Dynamic resistance
mA
R
d
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.