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WTPA12A60SW 参数 Datasheet PDF下载

WTPA12A60SW图片预览
型号: WTPA12A60SW
PDF下载: 下载PDF文件 查看货源
内容描述: 敏感的门双向晶闸管 [Sensitive Gate Bi-Directional Triode Thyristor]
分类和应用:
文件页数/大小: 6 页 / 444 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WTPA12A60SW  
Electrical Characteristics(Tc=25unless otherwise noted)  
Symbol  
IDRM/IRRM  
VTM  
Characteristics  
Min. Typ. Max. Unit  
Peak Forward or Reverse Blocking Current  
TJ=25℃  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
µA  
mA  
V
(VDRM=VRRM  
)
TJ=125℃  
-
1
Forward "On" Voltage (Note2) (ITM=17A tp=380µs)  
-
1.55  
10  
10  
10  
1.2  
1.2  
1.2  
-
Gate Trigger Current (Continuous dc)  
(VD=12 Vdc,RL=30Ω)  
T2+G+  
-
IGT  
T2+G-  
T2-G-  
T2+G+  
T2+G-  
T2-G-  
-
mA  
V
-
Gate Trigger Voltage (Continuous dc)  
(VD=12 Vdc,RL=30Ω)  
-
VGT  
-
-
0.2  
40  
-
VGD  
dV/dt  
IH  
Gate threshold voltage (VD=VDRM,RL=3.3KΩ,TJ=125℃)  
Critical rate of rise of commutation Voltage(VD=0.67VDRM  
Holding Current (IT=100mA)  
V
)
-
V/µs  
mA  
15  
25  
30  
25  
35  
Latching current  
T2+G+  
-
IL  
(VD=12Vdc,IGT=1.2 IGT  
)
T2+G-  
T2-G-  
-
mA  
mΩ  
-
Rd  
Dynamic resistance  
-
Note2.Forward current applied for 1 ms maximum duration ,duty cycle  
Note3.For both polarities of A2 to A1  
2/6  
Steady, keep you advance