WTF4A60
Electrical Characteristics (TC=25℃ unless otherwise noted)
Characteristics
Symbol
IDRM/IRRM
VTM
Min Typ. Max Unit
TJ=25℃
-
-
-
-
5
1
μA
off-state leakage current
(VAK= VDRM/VRRM Single phase, half wave)
TJ=125℃
mA
Forward “On” voltage (IT=5A, Inst. Measurement)
-
1.2
1.6
V
T2+,G+
T2+,G-
T2-,G-
T2+,G+
T2+,G-
T2-,G-
-
-
-
-
-
-
-
-
-
-
-
-
35
35
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
IGT
mA
Note:1
Note:1
35
1.5
1.5
1.5
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
)
VGT
V
Gate threshold Voltage
VGD
TJ=125℃
TJ=125℃
0.2
-
-
-
-
V
ＶＤ=1/2VDRM, RL = 3.3K Ω
Critical Rate of Rise of Off-State Voltage at Commutation
dv/dt
400
V/μs
(VD=0.67VDRM ;gate open)
Holding Current
Note:2
IH
IL
-
-
-
-
35
60
mA
mA
latching current
Note 1: minimum IGT is guaranted at 5% of IGT max.
2: for both polarities of A2 referenced to A1.
2/5
Steady, all for your advance.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
