WSP10D100
Power Schottky Rectifier
Features
■
10A(1×5A),100V
■
V
F
(max)=0.60V(@TJ=125℃)
■
Low power loss, high efficiency
■
Common cathode structure
■
Guard ring for over voltage protection, High reliability
■
Maximum Junction Temperature Range(175℃)
K
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection
applications.
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
V
DRM
V
DC
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
dv/dt
T
J,
T
stg
Parameter
Repetitive peak reverse voltage
Maximum DC blocking voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
Storage Temperature
per diode
per device
Value
100
100
10
5
10
150
1
10000
175
-40~150
Units
V
V
A
A
A
A
V/ns
℃
℃
Thermal Characteristics
Symbol
R
QJC
R
QCS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Value
Min
-
0.3
Typ
-
-
Max
1.3
-
Units
℃/W
℃/W
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-2
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
