WSP10D150
Silicon Controlled Rectifiers
Features
½
½
½
½
½
½
10A(2×5A),150V
V
F(max)
=0.72V(@T
J
=125℃)
Low power loss,high efficiency
Common cathode structure
Guard ring for over voltage protection, High reliability
Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency
switch power supply and Free wheeling diodes, polarity protection
applications.
Absolute Maximum Ratings
Symbol
V
DRM
V
DC
I
F(RMS)
Parameter
Repetitive Peak reverse Voltage
Maximum DC blocking Voltage
RMS forward Current
Per diode
Value
150
150
10
5
Units
V
V
A
I
F(AV)
Average forward current
Per device
10
150
1
10000
175
-40~150
A
I
FSM
I
RRM
dv/dt
T
J
T
STG
Surge non repetitive for ward current
Repetitive peak reverse current
Critical rate of rise pf reverse voltage
Junction Temperature
Storage Temperature
A
A
V/ns
°C
°C
Thermal Characteristics
Symbol
R
QJC
Parameter
Thermal Resistance Junction to Case
Value
Min
-
Typ
-
Max
2.2
Units
℃/W
Rev.A May.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
