WGW15G120W
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
Gate-body leakage current
IGES
VGS=±30V,VCE=0V
-
1200
-
-
-
±100
nA
V
Collector-Emitter Breakdown Voltage V(BR)CES
IC=0.5mA,VGE=0V
IC=15A, VGE=15V
-
2.4
2.8
3.0
-
3.5
Tc=125℃
Tc=150℃
Collector-Emitter Saturation Voltage
Zero Gate Voltage Collector current
-
V
VCE(sat)
-
-
-
0.2
VCE=1200V,
VGE=0V
Tc=100℃
Tc=150℃
ICES
-
2.0
mA
-
-
2.5
Gate threshold voltage
Forward Transconductance
Short Collector Current
Total Gate Charge
VGE(th)
gfs
VCE=VGE,ID=0.6mA
VCE=20V,ID=15A
4.5
-
-
6.5
V
S
10
90
85
1700
128
880
25
60
20
95
58
32
26
-
IC(SC)
Qg
VGE=15V, VCE=600, tsc<10μs
VCE=960V, IC=15A, VGE=15V
VCE=25V,
-
-
A
-
-
nC
Input capacitance
Ciss
-
2600
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
-
200
pF
ns
f=1MHz
Coss
Td(on)
tr
-
140
Turn-on delay time
-
-
-
-
-
-
-
-
VCE=600V,
IC=15A
Turn-onRise time
Turn-off delay time
Turn-off Fall time
-
Switchi
ng time
Td(off)
tf
-
RG=56Ω
-
Turn-on energy
Eon
-
VCE=600V,
IC=15A
Turn-off energy
Eoff
-
mJ
RG=56Ω
Total swiitching energy
Etotal
-
Anti-Parallet Diode Characteristics (Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
VDSF
trr
IS=15A,VGS=0V
-
-
-
-
-2.7
V
IS=10A,VGS=0V, R=800V
dIDR / dt =750 A / µs
150
1.2
-
-
ns
µC
Qrr
Note 1.Repeativity rating :pulse width limited by junction temperature
2.Allowed number of short circuits:<1000; time
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating
temperature. This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
2/7
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
