WFY6N02
WFY
20V N−Channel MOSFET
Features
■ 6A, 20V, R
DS(on)
(Max 40mΩ)@V
=4.5V
■ 1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
■ RoHS compliant
General Description
Genera Des
This MOSFET is produced using Winsemi’s advanced MOS
technology. This latest technology has been especially designed
to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for Load
switching and PA switching.
D
S
G
SOT-23
SOT
Absolute Maximum Ratings
(
Tc=25℃ unless otherwise noted)
Ratings
Symbol
V
DSS
I
D
I
DM
P
D
V
GS
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current
Drain Current Pulsed
Total Power Dissipation(Note 1)
Gate to Source Voltage
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Parameter
Value
20
6
20
0.3
±12
-55~150
260
Units
V
A
A
W
V
℃
℃
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Charac teristi
Symbol
R
QJA
R
QJA
R
QJA
Parameter
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min
-
Typ
-
Max
170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (
Mounted on a ceramic board (1000mm
2
×0.8mm) 1units
)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Rev. A Mar.2010-H04F
P12-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
