WFY03DN50
500V N−Channel Depletion-Mode DMOSFET
500V
Features
■
30mA, 500V, R
DS(on)
(Max750Ω)@V
GS
=0,I
D
=3.0mA
■
Free from secondary breakdown
■
Low power drive requirement
■
Integral source-drain diode
■
Ease of paralleling
■
Excellent thermal stability
■
High input impedance and low C
ISS
General Description
The WFY03DN50 is a high voltage N-channel depletion
mode (normally-on) transistor utilizing Winsemi’s lateral DMOS
technology.
The WFY03DN50 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplification.
G
S
D
SOT-23
Absolute Maximum Ratings
(
Tc=25℃ unless otherwise noted)
Symbol
V
DSS
I
D
I
DM
P
D
V
GS
dv/dt
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current(Note 1)
Tc=75℃
Drain Current Pulsed
Total Power Dissipation
Gate to Source Voltage
Peak Diode Recovery Voltage Rising Rate
Junction Temperature
Storage Temperature
Maximum lead Temperature for soldering purposes
24
120
0.5
±20
5
150
-55~150
300
℃
mA
W
V
V/ns
℃
Parameter
Value
500
30
Units
V
mA
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is
not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
R
QJA
R
QJC
Parameter
Thermal Resistance, Junction-to-Ambient(Note 2)
Thermal Resistance, Junction-to-Case(Note 2)
Value
Min
-
Typ
-
Max
250
200
Units
℃/W
℃/W
Note 1:
I
D
(continuous) is limited by max rated Tj
.
Note 2:Mounted on FR4 board, 25mm x 25mm x 1.57mm
Rev. A/0 Mar.2012
Copyright@Winsemi Mircroeletronicx Co.,Ltd.,All rights reserved.
T22-1
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
