WFW24N50W
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
TestCondition
VGS=±25V,VDS=0V
IG=±10 µA,VDS=0V
Min Type Max Unit
Gate leakage current
-
±30
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
V(BR)GSS
-
1
VDS=500V,VGS=0V
µA
Drain cut -off current
IDSS
VDS=400V,Tc=125℃
10
-
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
V(BR)DSS
ID=10 mA,VGS=0V
500
-
-
V
△ BVDSS
△ TJ
VGS(th)
RDS(ON)
gfs
/
ID=250µA,Referenced
V/℃
0.53
-
to 25℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=10V,ID=1mA
VGS=10V,ID=9A
VDS=40V,ID=9A
VDS=25V,
3.0
-
5.0
0.19
-
V
Ω
S
-
-
-
-
-
-
-
-
-
0.16
22
Ciss
3500
55
4500
70
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f=1MHz
Coss
tr
520
250
80
670
500
170
320
400
Rise time
VDD=250V,
ID=18A
Turn-on time
Switching time
ton
RG=25Ω
(Note4,5)
Fall time
tf
155
200
Turn-off time
Totalgate charge(gate-source
plus gate-drain)
toff
VDD=400V,
VGS=10V,
ID=18A
Qg
-
90
120
nC
Gate-source charge
Qgs
Qgd
-
-
23
44
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol TestCondition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
24
96
1.4
-
A
A
IDR=24A,VGS=0V
IDR=24A,VGS=0V,
dIDR / dt =100 A / µs
-
V
400
4.3
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=3.4mH IAS=24A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤24A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
