WFW20N60W
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=600V,VGS=0V
VGS=0V,TJ=125℃
ID=250µA,VGS=0V
ID=250µA,Referenced
to 25℃
Min Type Max Unit
Gate leakage current
-
±30
-
-
-
-
-
-
±100
-
nA
V
Gate-source breakdown voltage
V(BR)GSS
200
1000
-
µA
µA
V
Drain cut -off current
IDSS
-
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
V(BR)DSS
600
△BVDSS
△TJ
VGS(th)
RDS(ON)
gfs
/
-
0.5
-
V/℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=VGS,ID=4mA
VGS=10V,ID=10A
VDS≥10V,ID=10A
VDS=25V,
3
-
-
-
5
0.39
-
V
Ω
S
11
-
18
Ciss
4500
140
420
45
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
-
pF
f=1MHz
Coss
tr
-
Rise time
VGS=10V
VDS=300V,
ID=10A
-
60
40
60
Turn-on time
ton
-
20
Switching time
Fall time
ns
tf
-
40
RG=2.00Ω
Toff
Turn-off time
-
-
70
90
Total gate charge(gate-source
plus gate-drain)
VDS=300V,
VGS=10V,
ID=10A
Qg
150
170
nC
Gate-source charge
Qgs
Qgd
-
-
30
60
40
85
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
IDR
VDSF
trr
-
-
-
-
-
-
-
20
1.5
250
-
A
V
IDR=ISA,VGS=0V
IDR=10A,VGS=0V,
dIDR / dt =100 A / µs
ns
µC
Qrr
1
Note 1.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
2. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/3
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
