WFW18N50W
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±25V,VDS=0V
IG=±10 µA,VDS=0V
VDS=500V,VGS=0V
ID=10 mA,VGS=0V
ID=250µA,Referenced
to 25℃
Min Type Max Unit
Gate leakage current
-
-
-
-
-
±10
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
IDSS
±30
-
-
100
-
µA
V
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
V(BR)DSS
500
△BVDSS
△TJ
VGS(th)
RDS(ON)
gfs
/
-
0.5
-
V/℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=10V,ID=1mA
VGS=10V,ID=9A
VDS=40V,ID=9A
VDS=25V,
3
-
-
-
-
-
-
-
-
-
-
5
V
Ω
S
0.23
16
0.27
-
Ciss
2530
11
3290
14.3
390
90
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
f=1MHz
Coss
tr
300
40
Rise time
VDD=250V,
ID=18A
Turn-on time
Switching time
ton
150
95
310
200
230
ns
RG=25Ω
(Note4,5)
Fall time
tf
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
110
VDD=400V,
VGS=10V,
ID=18A
Qg
-
42
55
nC
Gate-source charge
Qgs
Qgd
-
-
12
14
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
18
72
1.4
-
A
A
IDR=18A,VGS=0V
IDR=18A,VGS=0V,
dIDR / dt =100 A / µs
-
V
500
5.4
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=5.2mH IAS=18A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
