WFW13N50
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
Min Type Max Unit
Gate leakage current
-
±30
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
-
1
VDS=500V,VGS=0V
µA
µA
V
IDSS
VDS=400V,TC=125℃
10
-
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25℃
500
-
-
△ BVDSS
/
V/℃
0.5
-
△
T
J
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS=10V,ID=250 µA
VGS=10V,ID=6.5A
VDS=50V,ID=6.5A
VDS=25V,
3
-
-
-
-
-
-
-
-
-
-
4.5
0.46
-
V
Ω
S
0.37
15
Ciss
Crss
Coss
tr
1580
20
2055
25
VGS=0V,
Reverse transfer capacitance
Output capacitance
pF
ns
f=1MHz
180
25
235
60
Rise time
VDD=250V,
ID=13A
Turn-on time
Switching time
ton
100
130
100
210
270
210
RG=9.1Ω
Fall time
tf
RD=31Ω
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
VDD=400V,
VGS=10V,
ID=13A
Qg
-
43
56
nC
Gate-source charge
Qgs
Qgd
-
-
7.5
-
-
(Note4,5)
Gate-drain("miller") Charge
18.5
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
13
52
A
A
IDR=13A,VGS=0V
IDR=13A,VGS=0V,
dIDR / dt =100 A / µs
-
1.4
V
442
2.16
633
3.24
ns
µC
Reverse recovery charge
Qrr
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤13A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
