WFU5N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=600V,VGS=0V
VDS=480V,Tc=125℃
ID=250 µA,VGS=0V
VDS=10V,ID=250 µA
VGS=10V,ID=2.2A
VDS=50V,ID=2.2A
VDS=25V,
Min Type Max Unit
Gate leakage current
-
-
-
±100
-
nA
V
Gate-source breakdown voltage
Drain Cut -off current
V(BR)GSS
±30
-
-
10
100
-
µA
µA
V
IDSS
-
-
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
600
-
2
-
-
-
-
-
-
-
-
-
-
4
V
2.1
4.0
520
9
2.5
-
Ω
S
Ciss
670
10.5
90
35
100
60
80
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
tr
pF
ns
f=1MHz
70
13
45
25
35
Rise time
VDD=300V,
ID=4.4A
Turn-on time
Switching time
ton
RG=25Ω
Fall time
tf
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
VDD=480V,
VGS=10V,
ID=4.4A
Qg
-
16
20
nC
Gate-source charge
Qgs
Qgd
-
-
3.4
7
-
-
(Note,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
-
-
-
-
-
-
-
-
4.5
17.6
1.4
-
A
A
IDRP
VDSF
trr
-
-
IDR=4.4A,VGS=0V
IDR=4.4A,VGS=0V,
dIDR /dt =100 A /µs
V
290
2
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤4.4A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
