WFU1N60N
WFU1N6
U1N60
Silicon N-Channel MOSFET
Cha
OSF
Features
■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 6.1nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply. electronic
Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
0.24
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
0.62
4.0
±30
47
3.1
4.5
30
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
1.0
Units
V
A
Channel
Temperature
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
-
0.5
-
Typ
-
-
-
Max
4.16
-
105
Units
℃/W
℃/W
℃/W
1 /7
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
