WFSA5510
N- Channel and P-Channel Silicon MOSFETs
Features
■
Low On resistance.
■
Composite type with an N-channel MOSFET and a
P-channel MOSFET driving from a 4.5V/-4.5V
supply voltage contained in a single package.
■
High-density mounting.
■
Zener-Protected
■
RoHS compliant.
SOP-8
Applications
■
Ultrahigh Speed Switching,
■
Motor Driver Applications
Absolute Maximum Ratings
at Ta=250C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
Conditions
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
PW≤10uS, duty cycle≤1%
Mounted on a ceramic board
(1000mm
2
×0.8mm) 1unit
Mounted
on
a
ceramic
board
Ratings
N-Ch
100
+20
2
8
1.3
P-Ch
-100
+20
-2
-8
Unit
V
V
A
A
W
W
Total Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
(1000mm
2
×0.8mm)
Maximum Junction Temperature
Storage Temperature Range
1.7
150
-55~+150
0
0
C
C
Rev.A Feb.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
