WFP8N60
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Symbol
I
GSS
V
(BR)GSS
Test Condition
V
GS
=±30V,V
DS
=0V
I
G
=±10 µA,V
DS
=0V
V
DS
=600V,V
GS
=0V
Min
-
±30
-
-
600
2
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
-
0.8
6.4
1100
135
16
30
80
65
60
28
7
14.5
Max
±100
-
10
100
-
4
1.2
-
1430
175
21
70
170
Unit
nA
V
µA
µA
V
V
Ω
S
Drain cut -off current
I
DSS
V
DS
=480V,Tc=125℃
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge(gate-source
V
(BR)DSS
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
tr
ton
tf
toff
I
D
=250 µA,V
GS
=0V
V
DS
=10V,I
D
=250 µA
V
GS
=10V,I
D
=3.75A
V
DS
=50V,I
D
=3.75A
V
DS
=25V,
V
GS
=0V,
f=1MHz
V
DD
=200V,
I
D
=7.5A
R
G
=25Ω
(Note4,5)
V
DD
=480V,
pF
ns
140
130
36
nC
-
-
-
-
Qg
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qgs
Qgd
V
GS
=10V,
I
D
=7.5A
(Note4,5)
-
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
trr
Qrr
Test Condition
-
-
I
DR
=7.5A,V
GS
=0V
I
DR
=7.5A,V
GS
=0V,
dI
DR
/ dt =100 A / µs
Min
-
-
-
-
-
Type
-
-
-
320
2.4
Max
7.5
29.6
1.4
-
-
Unit
A
A
V
ns
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH I
AS
=7.5A,V
DD
=50V,R
G
=0Ω,Starting T
J
=25℃
3.I
SD
≤7.5A,di/dt≤200A/us,V
DD
<BV
DSS
,STARTING T
J
=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
