WFP840
WFP840
Silicon N-Channel MOSFET
Cha
OSF
Features
■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 59nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
scrip
ript
Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
Electronic lamp ballast.
Absolute Maximum Ratings
axi
tin
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
1.0
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
5.1
32
±30
320
13.4
3.5
134
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
ter
Value
500
8
Units
V
A
Channel
Temperature
*Drain current limited by junction temperature
lim ted
unct
cti
Thermal Characteristics
rmal Cha act ris
Value
Symbol
R
QJC
R
QCS
R
QJA
Parameter
ter
Min
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
-
-
-
Ty p
-
0.5
-
Max
0.93
-
62
℃/W
℃/W
℃/W
Units
Rev.A Nov.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
