WFP840B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=500V,VGS=0V
VDS=400V,TC=125℃
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25℃
Min
Type Max
Unit
nA
V
Gate leakage current
-
±30
-
-
-
-
±100
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
-
1
µA
µA
V
IDSS
10
-
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
500
-
-
△BVDSS
△TJ
VGS(th)
RDS(ON)
gfs
/
0.57
-
V/℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=VGS,ID=250 µA
VGS=10V,ID=4.5A
VDS=40V,ID=4.5A
VDS=25V,
3
-
-
-
-
-
-
-
-
-
-
5
0.75
-
V
Ω
S
-
6.5
790
24
130
65
18
64
93
Ciss
1030
30
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f=1MHz
Coss
tr
170
140
15
Rise time
VDD=250V,
ID=9A
Turn-on time
Switching time
ton
RG=25Ω
Fall time
tf
125
195
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
VDD=400V,
VGS=10V,
ID=9A
Qg
-
28
35
nC
Gate-source charge
Qgs
Qgd
-
-
4
-
-
(Note4,5)
Gate-drain("miller") Charge
15
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min
Type Max
Unit
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
9
36
1.4
-
A
IDR=9A,VGS=0V
IDR=9A,VGS=0V,
dIDR / dt =100 A / µs
-
V
335
2.95
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=8mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
