WFP2N60B
FP2N60B
Silicon N-Channel MOSFET
Features
■ 2A,600V, R
DS(on)
(Max 4.7Ω)@V
GS
=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply.
G
D
S
TO220
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
0.43
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
1.3
8
±30
140
6.4
5.5
54
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
2.0
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min
-
0.5
-
Value
Typ
-
-
-
Max
2.3
-
62.5
Units
℃/W
℃/W
℃/W
Rev. D Nov.2009
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-2
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
