WFP18N20
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=200V,VGS=0V
ID=250 µA,VGS=0V
VDS=10V,ID=250 µA
VGS=10V,ID=11A
VDS=50V,ID=11A
VDS=25V,
Min Type Max Unit
Gate leakage current
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
IDSS
±30
-
-
-
1
µA
V
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
200
-
-
2
-
4
V
-
-
0.18
Ω
S
6.7
-
-
Ciss
-
-
-
-
-
-
-
-
1300
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
-
430
pF
ns
f=1MHz
Coss
-
130
Rise time
tr
VDD=100V,
ID=18A，
14
51
45
36
-
-
-
-
Turn-on time
Switching time
ton
RG=9.1Ω，
Fall time
tf
RD=5.4Ω
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
VDD=160V,
VGS=10V,
ID=18A
Qg
-
40
70
nC
Gate-source charge
Qgs
Qgd
-
-
-
-
13
39
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
18
72
A
A
-
IDR=18A,VGS=0V
IDR=18A,VGS=0V,
dIDR / dt =100 A / µs
1.4
300
3.4
2.0
610
7.1
V
ns
µC
Reverse recovery charge
Qrr
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=18A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤18A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
