WFN1N60N
Electrical Characteristics (Tc = 25° C)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
Min
Type Max
Unit
nA
Gate leakage current
-
±30
-
-
-
-
±100
Gate−source breakdown voltage
Drain cut−off current
-
V
V(BR)GSS
10
μA
VDS = 600 V, VGS = 0 V
IDSS
-
-
-
100
-
μA
V
VDS = 480 V, Tc = 125°C
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
600
V(BR)DSS
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
/
ID=250μA,Referenced to25℃
-
0.6
-
V/℃
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 0.5A
VDS = 40 V, ID = 0.5A
VDS = 25 V,
2
-
-
-
-
-
-
-
-
-
-
4
15
-
V
Ω
S
RDS(ON)
gfs
11
0.8
Ciss
Crss
Coss
td(on)
tr
178
4
221
5
VGS = 0 V,
pF
ns
Reverse transfer capacitance
Output capacitance
f = 1 MHz
19
16
45
25
36
27
46
104
61
81
Turn−on delay time
VDD =300 V,
ID =1A
Rise time
Switching time
RG=25Ω
Turn−off delay time
td(off)
tf
(Note4,5)
Fall time
Total gate charge (gate−source
plus gate−drain)
VDD =4 80 V,
VGS = 10 V,
ID = 1 A
7.2
-
6.1
Qg
nC
Gate−source charge
Qgs
Qgd
-
-
1.0
3.0
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25 C)
°
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
Test Condition
Min Type Max Unit
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
1.0
4.0
1.0
-
A
-
-
A
IDR = 1A, VGS = 0 V
IDR = 1A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
Reverse recovery time
185
0.51
ns
μC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=59mH,IAS=1A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤1A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2 /7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
