WFF640
Silicon N-Channel MOSFET
Features
■
18A,200V.R
DS(on)
(Max 0.18Ω)@V
GS
=10V
■
Ultra-low Gate Charge(Typical 16nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Isolation Voltage ( V
ISO
= 4000V AC )
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar
stripe, DMOS technology. This latest technology has been
especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
low voltage applications such as automotive, high efficiency
switching for DC/DC converters, and DC motor control.
G
D
S
TO220F
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
(Note
2)
(Note
1)
(Note 3)
(Note1)
Parameter
Value
200
18*
12*
72*
±30
258
13
5.5
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Channel
Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min
-
-
-
Value
Typ
-
0.5
-
Max
2.85
-
62.5
Units
℃/W
℃/W
℃/W
Rev, C Dec.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T03-1
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
