WFF634
WFF634
Silicon N-Channel MOSFET
OSF
Featu res
■ 9A, 250V, R
DS(on)
(Max 0.45Ω)@V
=10V
■ Ultra-low Gate Charge(Typical 41nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
ner
ript
ption
Thi s Po w e r MO S FET is pr odu c e d us i n g Wi n s e m i ’ s a dv anc e d
pl a n a r str i p e , DM O S te c h n ol o g y . Th is la t es t te c h n o l o g y ha s bee n
esp e c i a l l y de s i g n e d to mi n i m i z e on - s t a t e r e s i s t a n c e , ha v e a hi g h
r u g g e d av a l a n c h e ch a r a c t e r i s t i c s . T h i s d e v i c e s is sp e c i a l l y we l l
sui te d fo r lo w vol ta ge app l i cati ons suc h as auto mo ti ve, hi gh
effici ency switchi ng for DC/DC conv er ter s, and DC motor control.
Absolute Maximum Ratings
axi
ting
ngs
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
0.42
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
5
72
±20
300
7.4
4.8
48
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
P a r am e t e r
Value
250
Units
Unit
V
A
9
Channel
Temperature
*Dr ain current limited by junction temp erature
rre lim ted
unc
tem
atu
Thermal Characteristics
rmal
ris
Symbol
R
QJC
R
QCS
R
QJA
Param eter
ame
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Va lue
Min
-
-
-
Typ
-
0.5
-
Max
2.60
-
62.5
Units
Unit
℃/W
℃/W
℃/W
Rev.A Jun.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
