WFF5N60
WFF5N60
Silicon N-Channel MOSFET
ilic
Cha nne
Features
■
4.5A,600V,R
DS(on)
(Max 2.2Ω)@V
=10V
■
Ultra-low Gate Charge(Typical 16nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(150℃)
General Description
scrip
ript
This Power MOSFET is produced using Winsemi’s
advanced
Planar
stripe, VDMOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for half bridge and full
bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
axi
tin
Symbol
mbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
0.26
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
3.1*
16*
±30
240
10
4.5
33
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
met
Value
600
4.5*
Units
Unit
V
A
Channel
Temperature
*Drain current limited by junction tem perature
lim
unct
cti
ature
Thermal Characteristics
rmal Cha act ris
Symbol
mbol
R
QJC
R
QJA
Parameter
met
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
3.79
62.5
Units
Unit
℃/W
℃/W
1/7
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
