WFF5N65B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=650V,VGS=0V
VDS=500V,Tc=125℃
ID=250 µA,Referenced
to 25℃
Min Type Max Unit
Gate leakage current
-
-
-
-
-
±100
-
nA
V
Gate-source breakdown voltage
Drain Cut -off current
V(BR)GSS
±30
-
-
10
µA
µA
IDSS
100
Breakdown voltage Temperature
coefficient
△BVDSS
△TJ
/
-
0.65
-
V/℃
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
ID=250 µA,VGS=0V
VDS=VGS,ID=250 µA
VGS=10V,ID=2.25A
VDS=40V,ID=2.25A
VDS=25V,
650
-
-
-
V
V
Ω
S
2
-
-
-
-
-
-
-
-
-
4
1.8
4.7
490
9
2.5
-
Ciss
642
12
124
111
42
84
102
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f=1MHz
Coss
95
49
16
37
46
Turn-on Rise time
tr
VDD=300V,
ID=4.5A
Turn-on delay time
Switching time
Td(on)
tf
RG=25Ω
(Note4,5)
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Td(off)
VDD=480V,
VGS=10V,
ID=4.5A
Qg
-
13.3
19
nC
Gate-source charge
Qgs
Qgd
-
-
3.6
4.9
-
-
(Note,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
-
-
-
-
-
-
-
-
-
4.5
16
1.4
-
A
A
IDRP
VDSF
trr
IDR=4.5A,VGS=0V
IDR=4.5A,VGS=0V,
dIDR /dt =100 A /µs
-
V
330
2.67
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=25mH IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
