WFF2N60
Silicon N-Channel MOSFET
Silico N-Ch
MOSF
Features
■2A,600V,
R
DS(on)
(Max 5Ω)@V
=10V
■
Ultra-low Gate Charge(Typical 9.0nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Isolation Voltage ( V
ISO
= 4000V AC )
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high
rugged
avalanche characteristics. This
devices is
specially well suited for high efficiency switch mode power
supply.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
0.18
-55~150
300
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note
2)
(Note
1)
(Note 3)
(Note1)
1.5*
9.5*
±30
140
2.8
4.5
23
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
2.0*
Units
V
A
Channel
Temperature
*
Drain current limited by junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
5.5
62.5
Units
℃/W
℃/W
Re v. B1 N ov. 2007
T03-2