WFF2N65
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=600V,VGS=0V
VDS=480V,Tc=125℃
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25℃
Min Type Max Unit
Gate leakage current
-
±30
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
-
10
100
-
µA
µA
V
IDSS
-
Drain -source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
650
-
△BVDSS
/
0.65
-
TJ
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS=10V,ID=250 µA
VGS=10V,ID=1A
VDS=50V,ID=1A
VDS=25V,
2
-
-
-
-
-
-
-
-
-
-
4
5
V
Ω
S
4.2
2.05
380
7.6
35
-
Ciss
490
9.9
49
42
108
89
89
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
tr
pF
ns
f=1MHz
Rise time
VDD=300V,
ID=2A，
15
Turn-on time
Switching time
ton
50
RG=25Ω，
(Note4,5)
Fall time
tf
40
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
40
VDD=320V,
VGS=10V,
ID=2A
Qg
-
9.0
19
nC
Gate-source charge
Qgs
Qgd
-
-
1.7
7.2
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
2
6
A
A
IDR=2A,VGS=0V
IDR=2A,VGS=0V,
dIDR / dt =100 A / µs
-
1.4
-
V
200
1.3
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.5mH IAS=2.0A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤2.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/8
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
