WFF12N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 250 μA, VGS = 0 V
Min
-
Type
Max
Unit
nA
V
-
-
-
-
±100
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
IDSS
±30
-
-
1
-
μA
V
Drain−source breakdown voltage
V(BR)DSS
600
ΔBVDSS
ΔTJ
/
Break Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
V/℃
-
0.5
-
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS = 10 V, ID =250 μA
VGS = 10 V, ID =6.0A
VDS = 50 V, ID =6.0A
VDS = 25 V,
3
-
-
-
-
-
-
-
-
-
-
-
4.5
V
Ω
S
0.65
15
Ciss
Crss
Coss
tr
1790
175
23
2355
232
31
Reverse transfer capacitance
Output capacitance
VGS = 0 V,
pF
f = 1 MHz
Turn−on Rise time
133
80
175
100
160
310
VDD =300 V,
ID =12 A
Turn−on Delay time
Switchi
ton
ns
RG=9.1 Ω
Turn−off Fall time
ng time
tf
100
233
RD=31 Ω
(Note4,5)
(Note4,5)
Turn−off Delay time
toff
Total gate charge (gate−source
plus gate−drain)
Qg
-
39
52
VDD = 400 V,
VGS = 10 V,
ID =1 A
nC
Gate−source charge
Qgs
Qgd
-
-
8.5
19
-
-
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
IDR
Test Condition
Min
Type
Max
12
48
1.4
-
Unit
A
-
-
-
-
-
-
-
-
-
IDRP
VDSF
trr
A
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
Reverse recovery time
418
4.85
ns
Reverse recovery charge
Qrr
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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