WFD1N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
TestCondition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
Min
Type Max Unit
Gate leakage current
-
±30
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
-
10
100
-
VDS=600V,VGS=0V
µA
µA
V
IDSS
VDS=480V,Tc=125℃
-
Drain -source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
ID=250 µA,VGS=0V
600
-
△ BVDSS
△ TJ
VGS(th)
RDS(ON)
gfs
/
ID=250µA,Referenced to
V/℃
-
0.5
-
25℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=10V,ID=250 µA
VGS=10V,ID=0.65A
VDS=40V,ID=0.65A
VDS=25V,
2
-
-
-
-
-
-
-
-
-
-
7.7
1.3
247
5
4
8.5
-
V
Ω
S
Ciss
318
6.5
30
26
72
59
59
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f=1MHz
Coss
tr
23
11
33
26
26
Rise time
VDD=300V,
ID=1.3A
，
Turn-on time
Switching time
ton
RG=25Ω，
Fall time
tf
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
VDD=480V,
VGS=10V,
ID=1.3A
Qg
-
9.1
12
nC
Gate-source charge
Qgs
Qgd
-
-
1.2
4.5
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min
Type Max
Unit
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
1.3
5.0
1.4
-
A
IDR=1.3A,VGS=0V
IDR=1.3A,VGS=0V,
dIDR / dt =100 A / µs
-
V
163
0.85
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=92mH IAS=1.3A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤1.3A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
