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WCU4C60S 参数 Datasheet PDF下载

WCU4C60S图片预览
型号: WCU4C60S
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器器 [Silicon Controlled Rectifiers]
分类和应用: 可控硅整流器
文件页数/大小: 5 页 / 510 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WCU4C60S
Silicon Controlled Rectifiers
Features
�½
�½
�½
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
General Description
Sensitive gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating
control system.
Absolute Maximum Ratings
(
T
= 25°C unless otherwise specified)
J
Symbol
V
DRM
I
T(AV)
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
R.M.S On-State Current(180°
Condition
T
i
=60 °C
Tamb=25 °C
T
i
=60 °C
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
Ratings
600
1.35
Units
V
A
0.9
4
A
1.35
33
A
A
2
s
A/㎲
W
W
A
°C
°C
I
T(RMS)
Conduction Angle)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
T
J
T
STG
Surge On-State Current
WaveNon-Repetitive
I
2
t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
Tj=125 °C
t =10ms
F=60Hz,Tj=125 °C
4.5
50
0.5
0.2
1.2A
-40~125 °C
-40~150 °C
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Value
15
100
Units
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.