WCP8C60S
Silicon Controlled Rectifiers
Features
�½
�½
�½
Sensitive gate trigger current:I
GT
=200uA maximum
Low On-State Voltage :V
TM
=1.2(typ.) @ I
TM
)
Low reverse and forward blocking current:
I
DRM
/I
RRM
=2mA@TC=125℃
�½
Low holding current :I
H
=5mA maximum
General Description
Sensitive gate triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits,small motor control, gate driver for large SCR,sensing and
detecting circuits.general purpose switching and phase control
applications
Absolute Maximum Ratings
(
T
= 25°C unless otherwise specified)
J
Symbol
V
DRM
/V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180° Conduction Angle)
R.M.S On-State Current(180° Conduction Angle)
Non Repetitive Surge Peak on-state Current
tp=10ms
I
2
t Valuefor Fusing
Critical rate of rise of on-state current
T
J
=125 °C
I
TM
=2A;IG=10mA; dI
G
/dt=100A/µs
Average Gate Power Dissipation
Peak Gate Current
Reverse Peak Gate Voltage
Junction Temperature
Storage Temperature
T
J
=125 °C
T
J
=125 °C
T
J
=125 °C
tp=8.3ms
(Note(1)
T
I
=85 °C
T
I
=85 °C
tp=8.3ms
Value
600
5
8
73
Units
V
A
A
A
70
24.5
50
1
4
5
-40~125
-40~150
A
2
s
A/㎲
W
A
V
°C
°C
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
Note1:
Note1:Although
not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
Min
-
-
Typ
-
-
Max
20
70
Units
℃/W
℃/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
