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WCD6C60S 参数 Datasheet PDF下载

WCD6C60S图片预览
型号: WCD6C60S
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器器 [Silicon Controlled Rectifiers]
分类和应用: 可控硅整流器
文件页数/大小: 5 页 / 464 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WCD6C60S  
Electrical Characteristics (TC=25unless otherwise noted)  
Value  
Units  
Symbol  
IDRM  
Parameter  
Test Conditions  
Min  
Typ  
Max  
-
-
10  
μA  
μA  
VAK=VDRM  
TC=25℃  
Repetitive Peak Off-State Current  
TC=125℃  
-
-
-
-
200  
1.6  
VTM  
Peak On-State Voltage (1)  
Gate Trigger Current (2)  
ITM=9A, tp=380㎲  
V
VAK=6V(DC),RL=10Ω  
IGT  
-
-
-
0.2  
1.5  
mA  
TC=125℃  
VD=6V(DC),RL=10Ω  
VGT  
VGD  
Gate Trigger Voltage (2)  
-
V
V
TC=125℃  
Non-Trigger Gate Voltage (1)  
VAK=12V,RL=100Ω TC=125℃  
Linear slope up to  
VD=67%VDRM, gate open  
TJ=125℃  
0.2  
Critical Rate of Rise Off-State  
Voltage  
dv/dt  
200  
-
-
V/  
IT=100mA, Gate open  
TC=25℃  
IH  
Holding Current  
Latching Current  
-
-
-
20  
-
mA  
mA  
IL  
IG=1.2 IGT  
50  
*Notes:  
1.Pulse Width ≤1.0ms,Duty cycle≤1%  
2.RGK Current not Included in measurement.  
2/5  
Steady, all for your advance