WCD4C60S
Silicon Controlled Rectifiers
ilico
ont
Rect ier
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( IT(RMS)= 4 A )
◆
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
General Description
Sensitive gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
(
T
J
= 25°C unless otherwise specified)
axi
tin
Symbol
V
DRM
I
T(AV)
Conduction Angle)
R.M.S On-State Current(180°
I
T(RMS)
Conduction Angle)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
Dissipation
I
FGM
T
J
T
STG
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
1.2A
-40~125 °C
-40~150 °C
A
°C
°C
Surge On-State Current
Non-Repetitive
I
2
t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Tj=125 °C
0.2
W
t =10ms
F=60Hz,Tj=125 °C
4.5
50
0.5
A
2
s
A/㎲
W
Tamb=25 °C
1/2 Cycle, 60Hz, Sine Wave
33
A
1.35
Tamb=25 °C
T
i
=60 °C
0.9
4
A
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Condition
T
i
=60 °C
Ratings
600
1.35
Units
V
A
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Value
15
100
Units
℃/W
℃/W
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Jan 2009 .Rev .0
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
