WCD12C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT
(RMS)
=12A)
Low On-State Voltage(1.4V(Typ.)@I
TM
)
Non-isolation Type
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings
(T
J
= 25°C unless otherwise specified)
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge on-state Current
Condition
Half Sine Wave:T
C
=111 °C
180°conduction Angle
1/2 Cycle,60Hz,Sine Wave
Value
600
7.6
12
120
Units
V
A
A
A
A
2
s
A/㎲
W
W
A
V
°C
°C
Non-Repetitive
I
2
t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Over any 20ms period
t=8.3ms
72
50
5
0.5
2
5.0
-40~125
-40~150
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
Min
-
-
Typ
-
-
Max
1.3
60
Units
℃/W
℃/W
Rev.A Oct.2010
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