WBR13003D
WBR
High Voltage Fast-Switching NPN Power Transistor
Features
◆
Very High Switching Speed
◆
High Voltage Capability
◆
Wide Reverse Bias SOA
◆
Built-in freewheeling diode
General Description
scrip
ript
This Device is desi gn ed fo r hig h voltag e , High spe ed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
axi
tin
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
700
400
9.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
t
P
= 5ms
1.5
40
P
C
Total Dissipation at Ta = 25℃
T
J
T
STG
Operation Junction emperature
Storage Temperature
1.2
- 40 ~ 150
- 40 ~ 150
W
℃
℃
Thermal Characteristics
rmal Cha act ris
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
3.12
89
Units
℃/W
℃/W
1/ 5
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
