WBR13003L2
13003L
High Voltage Fast-Switching NPN Power Transistor
olt
st-Sw chi NPN
-Swi
ist
Features
eature
◆
◆
◆
◆
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
Built-in freewheeling diode
General Description
escript
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
ystem, switching mode power supply.
Absolute Maximum Ratings
olut
axi
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
350
200
7.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
= 5ms
1.5
40
150
- 40 ~ 150
Thermal Characteristics
The rma Cha cte rist
sti
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
3.12
89
Units
℃/W
℃/W
Jan 2009. Rev. 0
T02-1
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
