WBR13003X
WBR13003
High Voltage Fast-Switching NPN Power Transistor
Fast-Switc
Features
Fea
◆
Very High Switching Speed
◆
High Voltage Capability
◆
Wide Reverse Bias SOA
General Description
Gener
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
600
400
9.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
= 5ms
1.5
20
150
- 40 ~ 150
Thermal Characteristics
Ther
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
6.25
89
Units
℃/W
℃/W
Jan 2009. Rev. 0
.
T02-1
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
