WBR13003LD
BR13003L
High Voltage Fast-Switching NPN Power Transistor
Features
◆
◆
◆
◆
◆
Very High Switching Speed
High Voltage Capability
High Voltage Capability
Wide Soa
Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
ystem, switching mode power supply.
Absolute Maximum Ratings(Tc = 25°C)
Ratings(Tc 25°
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Total Dissipation at Tc = 25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
400
200
9.0
1.2
3.0
10
150
- 40 ~ 150
Units
V
V
V
A
A
W
℃
℃
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
3.12
89
Units
℃/W
℃/W
Jan 2009. Rev. 0
.
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved
T02-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
