WBN13003A1
High Voltage Fast-Switching NPN Power Transistor
Features
�½
�½
�½
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed
switching Characteristics required such as
system,switching mode power supply.
lighting
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter voltage
Emitter -Base voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
600
400
9.0
1.2
2.4
0.75
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
=5ms
1.5
18
-40~150
-40~150
Thermal Characteristics
Symbol
R
QJc
R
QJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
6.9
89
Units
℃/W
Rev.A Jun.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
